相关论文: Auger recombination and carrier multiplication in …
In a semiconductor heterostructure with type II energy band alignment, the spatial separation between electrons and holes slows down their radiative recombination. With increasing excitation intensity, Auger recombination quickly becomes…
Carrier Multiplication (CM) is a Coulomb-driven non-radiative recombination mechanism which leads to the generation of multiple electron-hole pairs after absorption of a single high-energy photon. Recently a new CM process, termed space…
We present first-principles quantum transport simulations of single-walled carbon nanotubes based on the NEGF method and including carrier-carrier interactions within the self-consistent GW approximation. Motivated by the characteristic…
Carrier multiplication (CM) describes a strong charge-carrier interaction process in semiconductor colloidal nanocrystals (NCs), wherein two band-edge excitons are simultaneously created by an absorbed photon with at least twice the bandgap…
The Auger recombination in bulk semiconductors can depopulate the charge carriers in a non-radiative way, which, fortunately, only has detrimental impact on optoelectronic device performance under the condition of high carrier density…
We demonstrate for the first time that impact ionization (II) [the inverse of Auger recombination (AR)] occurs with very high efficiency in semiconductor nanocrystals (NCs). Interband optical excitation of PbSe NCs at low pump intensities,…
Spectroscopic studies of semiconductor quantum dots (SQDs) addressing the problem of non-radiative carrier losses is vital for the improvement in the efficiency of various light-emitting devices. Various designs of SQDs emitter like doping,…
In quantum dots (QDs) the Auger recombination is a non-radiative process, where the electron-hole recombination energy is transferred to an additional carrier. It has been studied mostly in colloidal QDs, where the Auger recombination time…
Having already achieved near-unity quantum yields, with promising properties for light-emitting diode, lasing, and charge separation applications, colloidal core/shell quantum dots have great technological potential. The shell thickness and…
Embedded Si and Ge nanocrystals (NCs) in wide band-gap matrices are studied theoretically using an atomistic pseudopotential approach. From small clusters to large NCs containing on the order of several thousand atoms are considered.…
In semiconductor nanostructures nonradiative Auger recombination is enhanced by the presence of boundaries which relax the momentum conservation and thereby removes the threshold reduction for these processes. We propose a method to…
Auger processes play a critical role in the behavior of colloidal quantum dots (QDs). While nonradiative Auger recombination is a key performance-limiting factor in light-emitting applications, Auger effects also present exciting…
Carrier multiplication is a non-radiative recombination mechanism that leads to the generation of two or more electron-hole pairs after absorption of a single photon. By reducing the occurrence of dissipative effects, this process can be…
Being a source of clean and renewable energy, the possibility to convert solar radiation in electric current with high efficiency is one of the most important topics of modern scientific research. Currently the exploitation of interaction…
We report on the direct measurement of hot electrons generated in the active region of blue light-emitting diodes grown by ammonia molecular beam epitaxy by electron emission spectroscopy. The external quantum efficiency of these devices is…
Carrier recombination dynamics in strip silicon nano-waveguides is analyzed through time-resolved pump-and-probe experiments, revealing a complex recombination dynamics at densities ranging from ${10^{14}}$ to ${10^{17}}\,$cm$^{{-3}}$. Our…
Auger scattering channels are of fundamental importance to describe and understand the non-equilibrium charge carrier dynamics in graphene. While impact excitation increases the number of carriers in the conduction band and has been…
We report a numerical study of the effect of interface alloying and band-alignment on the Auger recombination processes of core/shell nanocrystals. Numerical calculations are carried out using a two-band Kane Hamiltonian. Smooth interfaces…
Auger recombination is an important non-radiative carrier recombination mechanism in many classes of optoelectronic devices. The microscopic Auger processes can be either direct or indirect, mediated by an additional scattering mechanism…
We report Auger recombination rates for wurtzite InGaN calculated from first principles density-functional and many-body-perturbation theory. Two different mechanisms are examined -- inter- and intra-band recombination -- that affect…