中文
相关论文

相关论文: Electroluminescence from single nanowires by tunne…

200 篇论文

We implement and demonstrate a scheme that permits to drive electroluminescence with an extremely low turn-on voltage. The device behaves like compound semiconductors, in which the electroluminescence turn-on voltage is about the same as…

材料科学 · 物理学 2009-11-13 Ajay K. Pandey , Jean-Michel Nunzi

Optical photoluminescence studies are performed in self-ion (Ga+)-implanted nominally doped n-GaN nanowires. A 50-keV Ga+ focused ion beam (FIB) in the fluence range of 1x1014 -2x10^16 ions cm^-2 is used for the irradiation process. A…

材料科学 · 物理学 2009-11-10 S. Dhara , A. Datta , C. T. Wu , Z. H. Lan , K. H. Chen , Y. L. Wang , C. W. Hsu , L. C. Chen , H. M. Lin , C. C. Chen , Y. F. Chen

We present an investigation in the device parameter space of band-to-band tunneling in nanowires with a diamond cubic or zincblende crystalline structure. Results are obtained from quantum transport simulations based on Non-Equilibrium…

介观与纳米尺度物理 · 物理学 2013-09-26 Pino D'Amico , Paolo Marconcini , Gianluca Fiori , Giuseppe Iannaccone

Traditionally, photodetector is based on solid materials constructed PN junction, which needs many delicate growth technologies. Herein, we demonstrate the feasibility of polarized liquid triggered photodetector where the liquid is…

应用物理 · 物理学 2022-07-01 Chang Liu , Yanghua Lu , Xutao Yu , Can Wang , Runjiang Shen , Shisheng Lin

We show simultaneous p and n type carrier injection in bilayer graphene channel by varying the longitudinal bias across the channel and the top gate voltage. The top gate is applied electrochemically using solid polymer electrolyte and the…

介观与纳米尺度物理 · 物理学 2009-09-08 Biswanath Chakraborty , Anindya Das , A. K. Sood

Double barrier GaN/AlN resonant tunneling heterostructures have been grown by molecular beam epitaxy on the (0001) plane of commercially available bulk GaN substrates. Resonant tunneling diodes were fabricated; room temperature…

We investigate the thermoelectric properties of a hybrid nanodevice composed by a 2D carbon based material and a superconductor. This system presents nonlinear bipolar thermoelectricity as induced by the spontaneous breaking of the…

介观与纳米尺度物理 · 物理学 2023-04-11 Lorenzo Bernazzani , Giampiero Marchegiani , Francesco Giazotto , Stefano Roddaro , Alessandro Braggio

InGaN/GaN tunnel junction contacts were grown on top of an InGaN/GaN blue (450 nm) light emitting diode wafer using plasma assisted molecular beam epitaxy. The tunnel junction contacts enable low spreading resistance n-GaN top contact layer…

材料科学 · 物理学 2014-10-09 Sriram Krishnamoorthy , Fatih Akyol , Siddharth Rajan

Electronic transport through a single-wall metallic carbon nanotube weakly coupled to one ferromagnetic and one nonmagnetic lead is analyzed in the sequential tunneling limit. It is shown that both the spin and charge currents flowing…

介观与纳米尺度物理 · 物理学 2009-11-13 I. Weymann , J. Barnas

We demonstrate evidence of coherent magnetic flux tunneling through superconducting nanowires patterned in a thin highly disordered NbN film. The phenomenon is revealed as a superposition of flux states in a fully metallic superconducting…

Core-shell GaAs-based nanowires monolithically integrated on Si constitute a promising class of nanostructures that could enable light emitters for fast inter- and intrachip optical connections. We introduce and fabricate a novel coaxial…

Chirality plays a crucial role in a broad range of processes including light-matter interactions in physics, chemistry and biology, which opens up new applications in nanophotonics, quantum technologies and photochemistry. Quantum…

光学 · 物理学 2026-04-10 Yuanyang Xie , Alexey V. Krasavin , Anatoly V. Zayats

We have demonstrated by electroluminescence the injection of spin polarized electrons through Co/Al2O3/GaAs tunnel barrier into p-doped InAs/GaAs quantum dots embedded in a PIN GaAs light emitting diode. The spin relaxation processes in the…

We demonstrate shadow evaporation-based fabrication of high-quality ultrasmall normal metal -- insulator -- superconductor tunnel junctions where the thickness of the superconducting electrode is not limited by the requirement of small…

介观与纳米尺度物理 · 物理学 2017-09-29 J. T. Peltonen , A. Moisio , V. F. Maisi , M. Meschke , J. S. Tsai , J. P. Pekola

In this letter, we show efficient electrical spin injection into a SiGe based \textit{p-i-n} light emitting diode from the remanent state of a perpendicularly magnetized ferromagnetic contact. Electron spin injection is carried out through…

材料科学 · 物理学 2009-11-13 L. Grenet , M. Jamet , P. Noé , V. Calvo , J. -M. Hartmann , L. E. Nistor , B. Rodmacq , S. Auffret , P. Warin , Y. Samson

Understanding and controlling the interaction between the excitonic states of a quantum emitter and the plasmonic modes of a nanocavity is one of the most relevant current scientific challenges, key for the development of many applications,…

介观与纳米尺度物理 · 物理学 2022-12-28 Alberto Martín-Jiménez , Óscar Jover , Koen Lauwaet , Daniel Granados , Rodolfo Miranda , Roberto Otero

We report the development of superconducting tantalum nitride (TaN$_{x} $) normal metal-insulator-superconductor (NIS) tunnel junctions. For the insulating barrier, we used both AlO$_{x}$ and TaO$_{x}$ (Cu-AlO$_{x}$-Al-TaN$_{x} $ and…

超导电性 · 物理学 2014-10-15 S. Chaudhuri , I. J. Maasilta

It has been suggested that microtubules and other cytoskeletal filaments may act as electrical transmission lines. An electrical circuit model of the microtubule is constructed incorporating features of its cylindrical structure with…

亚细胞过程 · 定量生物学 2010-06-28 Holly Freedman , Vahid Rezania , Avner Priel , Eric Carpenter , Sergei Y. Noskovd , Jack A. Tuszynski

Electrical excitation of light using inelastic electron tunneling is a promising approach for the realization of ultra-compact on-chip optical sources with high modulation bandwidth. However, the practical implementation of these nanoscale…

光学 · 物理学 2020-09-14 Saurabh Kishen , Jinal Tapar , Naresh Kumar Emani

Tunneling spectroscopy measurements have been carried out on a single molecule device formed by two Pd nanocrystals (dia, $\sim$5 nm) electronically coupled by a conducting molecule, dimercaptodiphenylacetylene. The I-V data, obtained by…

材料科学 · 物理学 2007-05-23 Ved Varun Agrawal , Reji Thomas , G. U. Kulkarni , C. N. R. Rao