相关论文: Electroluminescence from single nanowires by tunne…

We report a bipolar field effect tunneling transistor that exploits to advantage the low density of states in graphene and its one atomic layer thickness. Our proof-of-concept devices are graphene heterostructures with atomically thin boron…

Recently, the use of bottom-TJ geometry in LEDs, which achieves N-polar-like alignment of polarization fields in conventional metal-polar orientations, has enabled enhancements in LED performance due to improved injection efficiency. Here,…

The p-n junction diode and field-effect transistor (FET) are the two most ubiquitous building blocks of modern electronics and optoelectronics. In recent years, the emergence of reduced dimensionality materials has suggested that these…

Electrical properties of contact to p-type nitride semiconductor devices, based on gallium nitride were simulated by ab initio and by drift-diffusion calculations. The contact electric properties are shown to be dominated by electron…

We show that GdN nanoislands can enhance inter-band tunneling in GaN PN junctions by several orders of magnitude, enabling low optical absorption low-resistance tunnel junctions (specific resistivity 1.3 X 10-3 {\Omega}-cm2) for various…

Electron optics deals with condensed matter platforms for manipulating and guiding electron beams with high efficiency and robustness. Common devices rely on the spatial confinement of the electrons into one-dimensional channels. Recently,…

The two-dimensional atomically thin insulator hexagonal boron nitride (h-BN) constitutes a new paradigm in tunnel based devices. A large band gap along with its atomically flat nature without dangling bonds or interface trap states makes it…

Plasmonic gratings and nano-particle arrays in a metal-insulator-metal structures are fabricated on an erbium doped silicon nitride layer. This material system enables simple fabrication of the structure, since the active nitride layer can…

In this paper we demonstrate experimentally the implementation of a niobium-trilayer junction with an aluminum-oxide tunnel barrier, embedded in a high-gap superconducting niobium-titanium-nitride circuit. Previously reported heating by…

We investigate spin-polarized inter-band tunneling through measurement of (Ga,Mn)As based Zener tunnel diode. By placing the diode under reverse bias, electron spin polarization is transferred from the valence band of p-type (Ga,Mn)As to…

We have integrated on oxidized silicon wafers superconductive films and Josephson junctions along with sol-gel optical channel waveguides. The fabrication process is carried out in two steps that result to be solid and non-invasive. It is…

The advent of graphene and related 2D materials has recently led to a new technology: heterostructures based on these atomically thin crystals. The paradigm proved itself extremely versatile and led to rapid demonstration of tunnelling…

The electroluminescence of molecules confined inside a nanocavity in the scanning tunneling microscopy possesses many intriguing but unexplained features. We present here a general theoretical approach based on the density matrix formalism…

We have realised a semiconductor quantum structure that produces electroluminescence while operating in the light-matter strong coupling regime. The mid-infrared light emitting device is composed of a quantum cascade structure embedded in a…

The ultrafast conversion of electrical to optical signals at the nanoscale is of fundamental interest for data processing, telecommunication and optical interconnects. However, the modulation bandwidths of semiconductor LEDs are limited by…

Nowadays silicon nitride photonic integrated circuits serve as a mature platform for numerous applications. Planar waveguides and directional couplers made by CMOS-compatible technology are its basic elements. Here we demonstrate the…

Hybrid normal metal - insulator - superconductor microstructures suitable for studying an interference of electrons were fabricated. The structures consist of a superconducting loop connected to a normal metal electrode through a tunnel…

The characteristics of tunnel junctions formed between n- and p-doped graphene are investigated theoretically. The single-particle tunnel current that flows between the two-dimensional electronic states of the graphene (2D-2D tunneling) is…

Superconducting devices are prone to reduced performance caused by impurities and defects along the edges of their wires, which can lead to local current crowding. In this study, we explored the use of helium ion irradiation to modify the…

Using nanowires for photodetection constitutes an opportunity to enhance the absorption efficiency while reducing the electrical cross-section of the device. They present interesting features like compatibility with silicon substrates,…