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We present a theoretical investigation of the voltage-driven metal insulator transition based on solving coupled Boltzmann and Hartree-Fock equations to determine the insulating gap and the electron distribution in a model system -- a one…

强关联电子 · 物理学 2018-12-03 Giuliano Chiriacò , Andrew J. Millis

We derive the disorder vs. doping phase diagram of the doped Hubbard model via Dynamical Mean Field Theory combined with Typical Medium Theory, which allows the description of both Mott (correlation driven) and Anderson (disorder driven)…

强关联电子 · 物理学 2021-06-24 Nathan Giovanni , Marcello Civelli , Maria C. O. Aguiar

We examine electron-electron mediated relaxation following excitation of a correlated system by an ultrafast electric field pump pulse. The results reveal a dichotomy in the temporal evolution as one tunes through a Mott metal-to-insulator…

强关联电子 · 物理学 2013-08-20 B. Moritz , A. F. Kemper , M. Sentef , T. P. Devereaux , J. K. Freericks

The current theoretical and experimental situations are reviewed for low-dimensional insulating systems with a low magnetic transition temperature TM and pronounced short-range magnetic order above this temperature. Both the standard and…

强关联电子 · 物理学 2007-09-18 A A Katanin , V Yu Irkhin

The superfluid to Mott insulator transition in cavity polariton arrays is analyzed using the variational cluster approach, taking into account quantum fluctuations exactly on finite length scales. Phase diagrams in one and two dimensions…

其他凝聚态物理 · 物理学 2009-09-17 Markus Aichhorn , Martin Hohenadler , Charles Tahan , Peter B. Littlewood

We study the quantum phase transition between the superfluid and the Mott insulator in the one-dimensional (1D) Bose-Hubbard model. Using the time-evolving block decimation method, we numerically calculate the tunneling splitting of two…

量子气体 · 物理学 2015-05-30 Ippei Danshita , Anatoli Polkovnikov

High Harmonic Generation (HHG) promises to provide insight into ultrafast dynamics and has been at the forefront of attosecond physics since its discovery. One class of materials that demonstrate HHG are Mott insulators whose electronic…

光学 · 物理学 2022-07-27 Jacob Masur , Denys I. Bondar , Gerard McCaul

Emerging devices such as a neuromorphic device and a qubit can use the Mott transition phenomenon, but in particular, the diverging mechanism of the phenomenon remains to be clarified. The diverging-effective mass near Mott insulators was…

强关联电子 · 物理学 2022-05-05 Hyun-Tak Kim

We thoroughly analyze the divergences of the irreducible vertex functions occurring in the charge channel of the half-filled Hubbard model in close proximity to the Mott metal-insulator transition (MIT). In particular, by systematically…

强关联电子 · 物理学 2023-11-21 Mathias Pelz , Severino Adler , Matthias Reitner , Alessandro Toschi

The quasiparticle interferences (QPIs) of a Mott insulator are investigated using the $T$-matrix formalism implemented with the dynamical mean-field theory ($T$-DMFT). In Mott insulating state, because DMFT predicts a singularity in the…

强关联电子 · 物理学 2015-12-07 Shantanu Mukherjee , Wei-Cheng Lee

We analyze the quench dynamics of a one-dimensional bosonic Mott insulator and focus on the time evolution of density correlations. For these we identify a pronounced propagation front, the velocity of which, once correctly extrapolated at…

量子气体 · 物理学 2012-05-22 Peter Barmettler , Dario Poletti , Marc Cheneau , Corinna Kollath

We study by dynamical mean field theory the ground state of a quarter-filled Hubbard model of two bands with different bandwidths. At half-filling, this model is known to display an orbital selective Mott transition, with the narrower band…

强关联电子 · 物理学 2018-07-11 Francesco Grandi , Adriano Amaricci , Massimo Capone , Michele Fabrizio

The phenomenon of Mott insulation involves the localization of itinerant electrons due to strong local repulsion. Upon doping, a pseudogap (PG) phase emerges - marked by selective gapping of the Fermi surface without conventional symmetry…

We report the application of the density-matrix renormalization group method to a spatially anisotropic two-dimensional Hubbard model at half-filling. We find a deconfinement transition induced by the transverse hopping parameter $t_y$ from…

强关联电子 · 物理学 2015-05-28 S. Moukouri , Eitan Eidelstein

We use microscopic density functional theory to study filling transitions in systems with long-ranged wall-fluid and short-ranged fluid-fluid forces occurring in a right-angle wedge. By changing the strength of the wall-fluid interaction we…

统计力学 · 物理学 2016-05-04 Alexandr Malijevský , Andrew O. Parry

Effects of the electron-electron interaction in the two-dimensional flux phase are investigated. We treat the half-filled Hubbard model with a magnetic flux $\pi$ per plaquette by the quantum Monte Carlo method. When the interaction is…

强关联电子 · 物理学 2009-11-07 Y. Otsuka , Y. Hatsugai

Unusual metallic states involving breakdown of the standard Fermi-liquid picture of long-lived quasiparticles in well-defined band states emerge at low temperatures near correlation-driven Mott transitions. Prominent examples are…

材料科学 · 物理学 2018-11-14 L. Craco , M. S. Laad , S. Leoni

The one dimensional Bose-Hubbard model at a unit filling factor is studied by means of a very high order symbolic perturbative expansion. Analytical expressions are derived for the ground state quantities such as energy per site, variance…

其他凝聚态物理 · 物理学 2009-11-11 Bogdan Damski , Jakub Zakrzewski

We consider the phenomenon of electric Mott transition (EMT), which is an electric induced insulator to metal transition. Experimentally, it is observed that depending on the magnitude of the electric excitation the final state may show a…

Light-manipulation of correlated electronic phases in solids offers the tantalizing prospect of realizing electronic devices operating at the ultrafast time-scale. In this context, the experimental realization of non-equilibrium transitions…

强关联电子 · 物理学 2021-04-09 Francesco Grandi , Martin Eckstein