Weak and Strong Localization in Low-Dimensional Semiconductor Structures
凝聚态物理
2009-10-28 v1
摘要
The dependence of the localization length on the number of occupied subbands in low-dimensional semiconductors is investigated. The localization length is shown to be proportional to the number of occupied subbands in quasi-one-dimensional quantum wires while it grows exponentially with in quasi-two-dimensional systems. Also a weak localization theory is developed for large N with a well-defined small expansion parameter . The temperature dependence of the conductivity deduced using this perturbation theory agrees with the experimentally observed dependence.
引用
@article{arxiv.cond-mat/9601116,
title = {Weak and Strong Localization in Low-Dimensional Semiconductor Structures},
author = {S. -R. Eric Yang and J. Rammer},
journal= {arXiv preprint arXiv:cond-mat/9601116},
year = {2009}
}
备注
10 pages, no figures. To appear in Physical Review B