具有本征直接带隙的单轴拉伸应变锗
材料科学
2016-03-14 v1 光学
摘要
我们通过温度依赖的光致发光演示了拉伸应变锗中从间接带隙到直接带隙的转变。样品为应变微桥，其将0.16%的双轴应变增强至3.6%的单轴拉伸应变。将微桥冷却至20 K使单轴应变增加至最大5.4%。温度依赖的光致发光显示向本征直接带隙的转变发生在4.0%至4.5%之间。我们的数据与新的理论计算吻合良好，该计算预测带参数随应变发生强烈弯曲。
引用
@article{arxiv.1603.03454,
title = {Uniaxially stressed germanium with fundamental direct band gap},
author = {R. Geiger and T. Zabel and E. Marin and A. Gassenq and J. -M. Hartmann and J. Widiez and J. Escalante and K. Guilloy and N. Pauc and D. Rouchon and G. Osvaldo Diaz and S. Tardif and F. Rieutord and I. Duchemin and Y. -M. Niquet and V. Reboud and V. Calvo and A. Chelnokov and J. Faist and H. Sigg},
journal= {arXiv preprint arXiv:1603.03454},
year = {2016}
}
备注
9 pages, 8 figures