具有定制形貌与电学性质的TiS3晶体管
材料科学
2015-03-23 v1 介观与纳米尺度物理
摘要
通过合成一维纳米带和二维纳米片，展示了对TiS3形貌的控制。纳米片可剥离至单层。通过对两种形貌的广泛表征，发现了电子性质的差异，并归因于纳米片中较高的硫空位密度，根据密度泛函理论计算，这导致n型掺杂。
引用
@article{arxiv.1503.06106,
title = {TiS3 transistors with tailored morphology and electrical properties},
author = {Joshua O. Island and Mariam Barawi and Robert Biele and Adrian Almazan and Jose M. Clamagirand and Jose R. Ares and Carlos Sanchez and Herre S. J. van der Zant and Jose V. Alvarez and Roberto D'Agosta and Isabel J. Ferrer and Andres Castellanos-Gomez},
journal= {arXiv preprint arXiv:1503.06106},
year = {2015}
}
备注
28 pages, 4 figures, 1 table. Includes Supporting Information (9 figures, 2 tables)