重辐照硅像素探测器的模拟
仪器与探测器
2010-01-28 v1
摘要
我们表明，双峰电场是描述辐照硅像素传感器掠射角电荷收集测量所必需的。基于两个带相反电荷态的缺陷能级和载流子俘获的辐照硅模型，可以通过调整来很好地描述在0.5x10^{14} Neq/cm^2到5.9x10^{14} Neq/cm^2通量范围内测量的电荷收集分布。该模型正确预测了温度从-10°C变化到-25°C时分布的变化。测量的电荷收集分布与基于均匀有效掺杂密度的通常描述所预测的线性变化电场不一致。这一观察结果对使用有效掺杂密度来表征辐照硅的做法提出了质疑。该模型现在正用于校准CMS的像素命中重建算法。
引用
@article{arxiv.physics/0605215,
title = {Simulation of Heavily Irradiated Silicon Pixel Detectors},
author = {M. Swartz and V. Chiochia and Y. Allkofer and C. Amsler and D. Bortoletto and L. Cremaldi and S. Cucciarelli and A. Dorokhov and C. Hoermann and D. Kim and M. Konecki and D. Kotlinski and K. Prokofiev and C. Regenfus and T. Rohe and D. A. Sanders and S. Son and T. Speer},
journal= {arXiv preprint arXiv:physics/0605215},
year = {2010}
}
备注
Invited talk at International Symposium on the Development of Detectors for Particle, AstroParticle and Synchrtron Radiation Experiments, Stanford Ca (SNIC06) 8 pages, LaTeX, 11 eps figures