Quantum-size effect and tunneling magnetoresistance in ferromagnetic-semiconductor quantum heterostructures
材料科学
2015-06-25 v1
摘要
We report on the resonant tunneling effect and the increase of tunneling magnetoresistance (TMR) induced by it in ferromagnetic-semiconductor GaMnAs quantum-well heterostructures. The observed quantum levels of the GaMnAs quantum well were successfully explained by the valence-band kp model with the p-d exchange interaction. It was also found that the Fermi level of the electrode injecting carriers is important to observe resonant tunneling in this system.
引用
@article{arxiv.cond-mat/0608357,
title = {Quantum-size effect and tunneling magnetoresistance in ferromagnetic-semiconductor quantum heterostructures},
author = {S. Ohya and P. N. Hai and Y. Mizuno and M. Tanaka},
journal= {arXiv preprint arXiv:cond-mat/0608357},
year = {2015}
}