Hf基栅极叠层中隧穿电流随温度变化的建模及材料参数提取
介观与纳米尺度物理
2009-11-11 v1 材料科学
摘要
在本文中，我们表明通过电学表征和电容-电压及电流-电压特性的详细量子模拟，可以提取一系列替代栅介质材料的参数。我们专注于HfO2和HfSiXOY NZ栅极叠层，并提取了介电层中负责陷阱辅助隧穿电流分量和I-V特性温度行为的局域态性质的信息。模拟基于一个能够提供纯隧穿电流和陷阱辅助隧穿（TAT）分量的1D泊松-薛定谔求解器。已提取了导致TAT电流的陷阱的能量和俘获截面。
引用
@article{arxiv.cond-mat/0609403,
title = {Modelling of tunnelling currents in Hf-based gate stacks as a function of temperature and extraction of material parameters},
author = {Andrea Campera and Giuseppe Iannaccone and Felice Crupi},
journal= {arXiv preprint arXiv:cond-mat/0609403},
year = {2009}
}
备注
Preprint version of a paper submitted to TED, Transaction on Electron Devices. this is the final reviewed version. This work studies HfO2 and HfSiXOYNZ gate stacks, their C-V and I-V characteristics. A temperature dependent Trap Assisted Tunnneling model was developed to explain the temperature dependence of the I-V chaacteristics