近藤半导体及其相关化合物的高分辨软X射线光电子能谱研究
强关联电子
2018-10-02 v1
摘要
我们对近藤半导体CeRhAs及其相关化合物CeNiSn和CePdSn进行了体敏感的高分辨软X射线光电子能谱研究。多晶CePdSn在断裂表面和刮擦表面上的光谱对比表明，为了获得本征光电子能谱，断裂样品远优于刮擦。Ce 4d芯能级谱显示了这些材料之间电子态的明显差异。
引用
@article{arxiv.cond-mat/0410366,
title = {High-resolution soft x-ray photoemission study of a Kondo semiconductor and related compounds},
author = {A. Sekiyama and Y. Fujita and M. Tsunekawa and S. Kasai and A. Shigemoto and S. Imada and D. T. Adroja and T. Yoshino and F. Iga and T. Takabatake and T. Nanba and S. Suga},
journal= {arXiv preprint arXiv:cond-mat/0410366},
year = {2018}
}
备注
4 pages including 3 figures, to appear in Journal of Electron Spectroscopy and Related Phenomena