拼接式 CMOS 条形传感器的特性表征与模拟
仪器与探测器
2024-05-15 v1
摘要
在高能物理中，需要研究可提供高性价比、大面积覆盖的替代硅传感器概念。基于 CMOS 成像技术的传感器为径迹探测器提供了这样一种硅传感器概念。CMOS Strips 项目研究了由 LFoundry 采用 150nm 工艺制造的无源 CMOS 条形传感器。通过采用拼接技术，实现了两种不同的条形传感器格式。基于在 DESY II 测试束流设施处的测量结果，对传感器性能进行了特性表征。利用蒙特卡罗方法和 TCAD 器件模拟提供的电场对传感器响应进行了模拟。研究表明，采用拼接技术不会影响击中探测效率。本文还初步探讨了传感器内部的电场及其对产生的电荷载流子的影响。
关键词
引用
@article{arxiv.2405.08667,
title = {Characterisation and simulation of stitched CMOS strip sensors},
author = {Naomi Davis and Jan-Hendrik Arling and Marta Baselga and Leena Diehl and Jochen Dingfelder and Ingrid-Maria Gregor and Marc Hauser and Fabian Hügging and Tomasz Hemperek and Karl Jakobs and Michael Karagounis and Roland Koppenhöfer and Kevin Kröninger and Fabian Lex and Ulrich Parzefall and Arturo Rodriguez and Birkan Sari and Niels Sorgenfrei and Simon Spannagel and Dennis Sperlich and Tianyang Wang and Jens Weingarten and Iveta Zatocilova},
journal= {arXiv preprint arXiv:2405.08667},
year = {2024}
}
备注
5 pages, 6 figures, submitted to Nuclear Instruments and Methods in Physics Research, Section A as a conference proceeding for the 13th International "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors