相关论文: Characterisation and simulation of stitched CMOS s…

In the passive CMOS Strips Project, strip sensors were designed at the University of Bonn and produced by LFoundry in 150 nm technology, with an additional backside processing from IZM Berlin. Up to five individual reticules were connected…

Recent advances in CMOS imaging sensor technology , e.g. in CMOS pixel sensors, have proven that the CMOS process is radiation tolerant enough to cope with certain radiation levels required for tracking layers in hadron collider…

Strip detectors are populating outer trackers of high-energy particle experiments. They are convenient for covering large areas of sensitive material since they use less power and have fewer readout channels compared to pixels sensors.…

Most of the tracking detectors for high energy particle experiments are filled with silicon detectors since they are radiation hard, they can give very small spatial resolution and they can take advantage of the silicon electronics…

The radiation hardness of passive CMOS pixel sensors fabricated in 150 nm LFoundry technology is investigated. CMOS process lines are especially of interest for large-scale silicon detectors as they offer high production throughput at…

CMOS pixel sensors (CPS) represent a novel technological approach to building charged particle detectors. CMOS processes allow to integrate a sensing volume and readout electronics in a single silicon die allowing to build sensors with a…

For the Inner Tracking System 3 (ITS3) upgrade, the ALICE experiment at CERN requires monolithic active pixel sensors of dimensions up to 97~mm$\,\times\,$266~mm, occupying a large fraction of a 300 mm wafer. To manufacture such a…

The depleted CMOS sensors are emerging as one of the main candidate technologies for future tracking detectors in high luminosity colliders. Its capability of integrating the sensing diode into the CMOS wafer hosting the front-end…

We are investigating the feasibility of using CMOS foundries to fabricate silicon detectors, both for pixels and for large-area strip sensors. The availability of multi-layer routing will provide the freedom to optimize the sensor geometry…

Pixel sensors using 8" CMOS processing technology have been designed and characterized offering the benefits of industrial sensor fabrication, including large wafers, high throughput and yield, as well as low cost. The pixel sensors are…

High Energy Particle Physics experiments at the LHC use hybrid silicon detectors, in both pixel and strip geometry, for their inner trackers. These detectors have proven to be very reliable and performant. Nevertheless, there is great…

CMOS Pixel Sensors tend to become relevant for a growing spectrum of charged particle detection instruments. This comes mainly from their high granularity and low material budget. However, several potential applications require a higher…

During the scheduled high luminosity upgrade of LHC, the world's largest particle physics accelerator at CERN, the position sensitive silicon detectors installed in the vertex and tracking part of the CMS experiment will face more intense…

During the scheduled high luminosity upgrade of LHC, the world's largest particle physics accelerator at CERN, the position sensitive silicon detectors installed in the vertex and tracking part of the CMS experiment will face more intense…

Silicon strip sensors have long been a reliable technology for particle detection. Here, we push the limits of silicon tracking detectors by targeting an unprecedentedly low material budget of 2%-7% $X_0$ in an 8-layer 4 m$^2$ detector…

Monolithic active pixel sensors (MAPS) produced in a 65 nm CMOS imaging technology are being investigated for applications in particle physics. The MAPS design has a small collection electrode characterized by an input capacitance of ~fF,…

Silicon pixel sensors manufactured using commercial CMOS processes are promising instruments for high-energy particle physics experiments due to their high yield and proven radiation hardness. As one of the essential factors for the…

The LHC Phase-II upgrade will lead to a significant increase in luminosity, which in turn will bring new challenges for the operation of inner tracking detectors. A possible solution is to use active silicon sensors, taking advantage of…

Both the current upgrades to accelerator-based HEP detectors (e.g. ATLAS, CMS) and also future projects (e.g. CEPC, FCC) feature large-area silicon-based tracking detectors. We are investigating the feasibility of using CMOS foundries to…

In order to achieve the challenging requirements on the CLIC vertex detector, a range of technology options have been considered in recent years. One prominent idea is the use of active sensors implemented in a commercial high-voltage CMOS…