Atom lithography using MRI-type feature placement
原子物理
2009-11-07 v1
摘要
We demonstrate the use of frequency-encoded light masks in neutral atom lithography. We demonstrate that multiple features can be patterned across a monotonic potential gradient. Features as narrow as 0.9 microns are fabricated on silicon substrates with a metastable argon beam. Internal state manipulation with such a mask enables continuously adjustable feature positions and feature densities not limited by the optical wavelength, unlike previous light masks.
引用
@article{arxiv.physics/0209084,
title = {Atom lithography using MRI-type feature placement},
author = {J. H. Thywissen and M. Prentiss},
journal= {arXiv preprint arXiv:physics/0209084},
year = {2009}
}
备注
4 pages, 4 figures