Atom Nano-lithography with Multi-layer Light Masks: Particle Optics Analysis
量子物理
2009-11-11 v1
摘要
We study the focusing of atoms by multiple layers of standing light waves in the context of atom lithography. In particular, atomic localization by a double-layer light mask is examined using the optimal squeezing approach. Operation of the focusing setup is analyzed both in the paraxial approximation and in the regime of nonlinear spatial squeezing for the thin-thin as well as thin-thick atom lens combinations. It is shown that the optimized double light mask may considerably reduce the imaging problems, improve the quality of focusing and enhance the contrast ratio of the deposited structures.
引用
@article{arxiv.quant-ph/0503181,
title = {Atom Nano-lithography with Multi-layer Light Masks: Particle Optics Analysis},
author = {R. Arun and I. Sh. Averbukh and T. Pfau},
journal= {arXiv preprint arXiv:quant-ph/0503181},
year = {2009}
}
备注
7 pages including 8 figures in Revtex