三维拓扑绝缘体 HgTe 基量子点接触器中的异常电导步进
介观与纳米尺度物理
2025-03-13 v4
摘要
我们探讨了应变 HgTe 中点接触的电力输运。在无磁场 时不存在量化。然而，在较高磁场下，我们观察到显著的非整数电导步进。基于数值紧束縛计算和现象学的Landauer-Buttiker方法，我们将这些异常的、非整数量化台阶归因于点接触处的显著散射效应。
引用
@article{arxiv.2410.17786,
title = {Anomalous conductance steps in three-dimensional topological insulator HgTe-based quantum point contacts},
author = {Elisabeth Richter and Michael Barth and Dmitriy A. Kozlov and Angelika Knothe and Nikolay N. Mikhailov and Juliane Steidl and Cosimo Gorini and Stefan Hartl and Wolfgang Himmler and Klaus Richter and Dieter Weiss},
journal= {arXiv preprint arXiv:2410.17786},
year = {2025}
}
备注
Submitted to PRR on 10/21/2024, re-submitted with minor changes to PRR on 01/14/2025. Accepted on 02/04/2025 and published in PRR on 03/11/2025. 8 pages, 7 figures