The quantum anomalous Hall effect (QAHE) is a fundamental quantum transport phenomenon that manifests as a quantized transverse conductance in response to a longitudinally applied electric field in the absence of an external magnetic field, and promises to have immense application potentials in future dissipation-less quantum electronics. Here we present a novel kinetic pathway to realize the QAHE at high temperatures by n-p codoping of three-dimensional topological insulators. We provide proof-of-principle numerical demonstration of this approach using vanadium-iodine (V-I) codoped Sb2Te3 and demonstrate that, strikingly, even at low concentrations of ∼2\% V and ∼1\% I, the system exhibits a quantized Hall conductance, the tell-tale hallmark of QAHE, at temperatures of at least ∼ 50 Kelvin, which is three orders of magnitude higher than the typical temperatures at which it has been realized so far. The proposed approach is conceptually general and may shed new light in experimental realization of high-temperature QAHE.
@article{arxiv.1507.03218,
title = {High-Temperature Quantum Anomalous Hall Effect in n-p Codoped Topological Insulators},
author = {Shifei Qi and Zhenhua Qiao and Xinzhou Deng and Ekin D. Cubuk and Hua Chen and Wenguang Zhu and Efthimios Kaxiras and S. B. Zhang and Xiaohong Xu and Zhenyu Zhang},
journal= {arXiv preprint arXiv:1507.03218},
year = {2016}
}