Conductance quantization in etched Si/SiGe quantum point contacts
介观与纳米尺度物理
2009-11-11 v2
摘要
We fabricated strongly confined Schottky-gated quantum point contacts by etching Si/SiGe heterostructures and observed intriguing conductance quantization in units of approximately 1e2/h. Non-linear conductance measurements were performed depleting the quantum point contacts at fixed mode-energy separation. We report evidences of the formation of a half 1e2/h plateau, supporting the speculation that adiabatic transmission occurs through 1D modes with complete removal of valley and spin degeneracies.
关键词
引用
@article{arxiv.cond-mat/0512412,
title = {Conductance quantization in etched Si/SiGe quantum point contacts},
author = {G. Scappucci and L. Di Gaspare and E. Giovine and A. Notargiacomo and R. Leoni and F. Evangelisti},
journal= {arXiv preprint arXiv:cond-mat/0512412},
year = {2009}
}
备注
to appear in Physical Review B