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相关论文: Conductance quantization in etched Si/SiGe quantum…

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We report on the fabrication and electronic transport characterisation of Schottky-gated strongly confined Si/SiGe quantum point contacts (QPC). At zero magnetic field and T=450mK the QPC conductance as a function of gate voltage shows a…

介观与纳米尺度物理 · 物理学 2009-11-11 G. Scappucci , L. Di Gaspare , E. Giovine , A. Notargiacomo , R. Leoni , F. Evangelisti

We present new results of the ``0.7'' 2(e^2)/h structure or quasi plateau in some of the most strongly confined point contacts so far reported. This strong confinement is obtained by a combination of shallow etching and metal gate…

We present the results of million atom electronic quantum transport calculations for graphene nanoconstrictions with edges that are smooth apart from atomic scale steps. We find conductances quantized in integer multiples of 2e2/h and a…

介观与纳米尺度物理 · 物理学 2015-06-04 S. Ihnatsenka , G. Kirczenow

We analyze the conductance of the quantum point contact containing large localized spin J. The additional plateau is formed on a ballistic conductance staircase if only one propagating channel is rendered conducting. The conductance value…

介观与纳米尺度物理 · 物理学 2009-11-11 I. A. Shelykh , N. G. Galkin , N. T. Bagraev

The integer quantized conductance of one-dimensional electron systems is a well understood effect of quantum confinement. A number of fractionally quantized plateaus are also commonly observed. They are attributed to many-body effects, but…

介观与纳米尺度物理 · 物理学 2011-10-18 A. P. Micolich

It is known that the conductance of a quantum point contact is quantized in units of $2e^2/h$ and this quantization is destroyed by a non-adiabatic scatterer in the point contact, due to backscattering. Recently, it was shown [Phys. Rev.…

介观与纳米尺度物理 · 物理学 2008-02-03 P. Singha Deo , B. C. Gupta , A. M. Jayannavar , F. M. Peeters

We report experimental results on a quantum point contact (QPC) device formed in a wide AlAs quantum well where the two-dimensional electrons occupy two in-plane valleys with elliptical Fermi contours. To probe the closely-spaced,…

介观与纳米尺度物理 · 物理学 2009-11-11 O. Gunawan , B. Habib , E. P. De Poortere , M. Shayegan

One-dimensional quantized conductance is derived from the electrons in a homogeneous electric field by calculating the traveling time of the accelerated motion and the number of electrons in the one-dimensional region. As a result, the…

介观与纳米尺度物理 · 物理学 2024-12-25 Daiju Terasawa

We explore electrical transport through a point contact in strained HgTe, a three-dimensional topological insulator. In the absence of a magnetic field $B$, there is no quantization. However, under higher magnetic fields, we observe…

Quantum point contact or QPC -- a constriction in a semiconducting two-dimensional (2D) electron system with a quantized conductance -- has been found as the building block of novel spintronic, and topological electronic circuits. They can…

The $\nu = 2/3$ fractional quantum Hall state is the hole-conjugate state to the primary Laughlin $\nu = 1/3$ state. We investigate transmission of edge states through quantum point contacts fabricated on a GaAs/AlGaAs heterostructure…

介观与纳米尺度物理 · 物理学 2023-03-01 James Nakamura , Shuang Liang , Geoffrey C. Gardner , Michael J. Manfra

We have studied ballistic transport in a 1D channel formed using surface gate techniques on a back-gated, high-mobility, bilayer 2D hole system. At millikelvin temperatures, robust conductance quantization is observed in the quantum wire…

介观与纳米尺度物理 · 物理学 2009-11-11 R. Danneau , W. R. Clarke , O. Klochan , A. P. Micolich , A. R. Hamilton , M. Y. Simmons , M. Pepper , D. A. Ritchie

In this letter, we report the magneto-electronic properties of high mobility InAs quantum point contacts grown on InP substrates. The 1D conductance reaches a maximum value of 17 plateaus, quantized in units of 2e^2/h, where e is the…

介观与纳米尺度物理 · 物理学 2025-03-12 I. Villar Rodriguez , Y. Gul , C. P. Dempsey , J. T. Dong , S. N. Holmes , C. J. Palmstrom , M. Pepper

Conductance measurements of carbon nanotubes containing gated local depletion regions exhibit plateaus as a function of gate voltage, spaced by approximately e2/h, the quantum of conductance for a single (non-degenerate) mode. Plateau…

介观与纳米尺度物理 · 物理学 2009-11-10 M. J. Biercuk , N. Mason , J. Martin , A. Yacoby , C. M. Marcus

We studied ballistic transport across a quantum point contact (QPC) defined in a high-quality, GaAs (311)A two-dimensional (2D) hole system using shallow etching and top-gating. The QPC conductance exhibits up to 11 quantized plateaus. The…

介观与纳米尺度物理 · 物理学 2009-11-13 J. Shabani , J. R. Petta , M. Shayegan

Ge/SiGe quantum well heterostructures confining a high-mobility two-dimensional hole gas (2DHG) have emerged as a compelling platform for hybrid superconductor(S)-semiconductor(Sm) quantum devices. Here, we investigate the low-temperature…

We analyze the fractional quantization of the ballistic conductance associated with the light and heavy holes bands in Si, Ge and GaAs systems. It is shown that the formation of the localized hole state in the region of the quantum point…

介观与纳米尺度物理 · 物理学 2009-11-13 M. Rosenau da Costa , I. A. Shelykh , N. T. Bagraev

Features below the first conductance plateau in ballistic quantum point contacts (QPCs) are often ascribed to electron interaction and spin effects within the single mode limit. In QPCs with a highly asymmetric geometry, we observe sharp…

介观与纳米尺度物理 · 物理学 2019-04-01 Phillip M Wu , Peng Li , Albert M Chang

Short length quantum wires (quantum contacts) exhibit a conductance structure at the value of conductance close to 0.7 \times 2e^2/h. The structure is also called the conductance anomaly. In longer contacts the structure evolves to the…

介观与纳米尺度物理 · 物理学 2009-11-07 O. P. Sushkov

Quantum point contact devices are indispensable tools for probing the edge structure of the fractional quantum Hall (FQH) states. Recent observations of quantized conductance plateaus accompanied by shot noise in such devices, as well as…

介观与纳米尺度物理 · 物理学 2020-03-04 Christian Spånslätt , Jinhong Park , Yuval Gefen , Alexander D. Mirlin
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