具有增强计时性能的3D沟槽硅传感器的精确建模及其与试验束测量的比较
仪器与探测器
2021-10-27 v1
摘要
本文针对TIMESPOT项目开发的基于3D沟槽硅传感器的双像素带电粒子探测结构进行了详细仿真，并将仿真结果与在PSI实验室M1束流线上进行的测量进行了比较。该仿真基于多种软件工具（TCAD、GEANT4、TCoDe和TFBoost）的联合使用，通过利用单线程或多线程处理器的并行计算，能够在极短的计算时间内（每个仿真信号O(1-100 s)）完整设计并仿真器件物理响应。这使得能够生成大量仿真信号样本，对传感器特性进行详细研究，并与实验结果进行精确比较。
引用
@article{arxiv.2106.08191,
title = {Accurate modelling of 3D-trench silicon sensor with enhanced timing performance and comparison with test beam measurements},
author = {Davide Brundu and Alessandro Cardini and Andrea Contu and Gian Matteo Cossu and Gian Franco Dalla Betta and Michela Garau and Adriano Lai and Andrea Lampis and Angelo Loi and Maria Margherita Obertino and Benedetto Gianluca Siddi and Stefania Vecchi},
journal= {arXiv preprint arXiv:2106.08191},
year = {2021}
}
备注
23 pages, 18 figures