Related papers: Schottky diode temperature sensor for pressure sen…
This work presents electrothermal co-design of vertical \b{eta}-Ga2O3 Schottky barrier diodes (SBDs) to enhance both heat dissipation and high field management in high-power applications. Here, we demonstrate device-level thermal management…
We developed a simple, flexible, low-cost, and computer-controlled cryogenic temperature measurement system for undergraduate instructional laboratories. An Arduino microcontroller board measures the voltage across a silicon diode to…
In this letter, we demonstrate a lateral AlGaN/GaN Schottky barrier diode (SBD) on sapphire substrate with low turn-on voltage (Von) and high breakdown voltage (VBK). By using a double barrier anode (DBA) structure formed by the mixture of…
In the planned or considered upgrades of LHCb, ALICE and Belle II experiments, the Ring imaging Cherenkov (RICH) detectors will have to be improved in order to function at increased beam interaction density. The photodetectors used in…
We have fabricated light emitting diodes (LEDs) with Schottky contacts on Si-nanocrystals formed by simple techniques as used for standard Si devices. Orange electroluminescence (EL) from these LEDs could be seen with the naked eye at room…
We demonstrate the capabilities of a high temperature measurement set-up recently developed at our institute. It is dedicated to the characterization of semiconductor devices and test structures in the temperature range from room…
Phase change thermal diodes (PCTD) suffer from fairly low thermal rectification ratio, which hampers their widespread utilization as thermal management and control units for cutting-edge technologies, encompassing photovoltaics,…
This paper presents the design, the fabrication and the characterization of Schottky graphene/silicon photodetectors, operating at both 2 micron and room temperature. The graphene/silicon junction has been carefully: characterized device…
Very high applied pressure induces superconductivity with the transition temperature ($T_c$) exceeding 19 K in elemental yttrium, but relatively little is known about the nature of that superconductivity. From point-contact spectroscopy…
We present experimental results of characterization of Silicon photomultipliers (SiPM) in a temperature range from 90~mK to 40~K. Two SiPMs, one from ONSEMI and one from Hamamatsu Photonics were tested. Operating voltage ranges, dark count…
We theoretically investigate the application of topological plasmon polaritons (TPPs) to temperature sensing for the first time. Based on an analogy of the topological edge states in the Su-Schrieffer-Heeger model, TPPs are realized in a…
In this paper we present our progress towards the opto-electronic characterization of indium phosphide (InP) nanowire transistors at milli-Kelvin (mK) temperatures. First, we have investigated the electronic transport of the InP nanowires…
We have studied the optical properties of two-dimensional (2D) Schottky photodiode heterojunctions made of chemical vapor deposited (CVD) graphene on n- and p-type Silicon (Si) substrates. Much better rectification behavior is observed from…
Major advances in silicon pixel detectors, with outstanding timing performance, have recently attracted significant attention in the community. In this work we present and discuss the use of state-of-the-art Geiger-mode APDs, also known as…
This work presents the electrostatic analysis of a novel Ga$_2$O$_3$ vertical Schottky diode with three different guard ring configurations to reduce the peak electric field at the metal edges. Highly doped p-type GaN, p-type nonpolar AlGaN…
New generation Cadmium Telluride (CZT & CdTe) solid state detectors can provide high quantum efficiency with reasonably good energy resolution and can operate at near room temperature; an unique advantage for space experiments. We present…
Vertical (-201) and (010) beta-Ga2O3 Schottky barrier diodes (SBDs) were fabricated on single-crystal substrates grown by edge-defined film-fed growth (EFG) method. High resolution X-ray diffraction (HRXRD) and atomic force microscopy (AFM)…
This paper reports on the modulation of Schottky barrier heights (SBH) on three different orientations of $\beta$-Ga$_2$O$_3$ by insertion of an ultra-thin SiO$_2$ dielectric interlayer at the metal-semiconductor junction, which can…
The seamless integration of III-V nanostructures on silicon is a long-standing goal and an important step towards integrated optical links. In the present work, we demonstrate scaled and waveguide coupled III-V photodiodes monolithically…
The optical fiber Fabry-Perot interferometer (FPI) has been widely investigated as a potential temperature sensor. To function as a temperature sensor, the cavity of the FPI is typically constructed from either silica fibers or polymers.…