This work presents the electrostatic analysis of a novel Ga2O3 vertical Schottky diode with three different guard ring configurations to reduce the peak electric field at the metal edges. Highly doped p-type GaN, p-type nonpolar AlGaN and polarization doped graded p-AlGaN are simulated and analyzed as the guard ring material, which forms a heterojunction with the Ga2O3 drift layer. Guard ring with non-polar graded p-AlGaN with a bandgap larger than Ga2O3 is found to show the best performance in terms of screening the electric field at the metal edges. The proposed guard ring configuration is also compared with a reported Ga2O3 Schottky diode with no guard ring and a structure with a high resistive Nitrogen-doped guard ring. The optimized design is predicted to have breakdown voltage as high as 5.3 kV and a specific on-resistance of 3.55 mΩ-cm2 which leads to an excellent power figure of merit of 7.91 GW/cm2.
@article{arxiv.2006.15645,
title = {Design of a $\beta$-Ga$_2$O$_3$ Schottky Barrier Diode With p-type III-Nitride Guard Ring for Enhanced Breakdown},
author = {Saurav Roy and Arkka Bhattacharyya and Sriram Krishnamoorthy},
journal= {arXiv preprint arXiv:2006.15645},
year = {2020}
}