In this letter, we demonstrate a lateral AlGaN/GaN Schottky barrier diode (SBD) on sapphire substrate with low turn-on voltage (Von) and high breakdown voltage (VBK). By using a double barrier anode (DBA) structure formed by the mixture of Platinum (Pt) and Tantalum (Ta), the Von of the SBD can be as low as 0.36 V with a leakage current of 2.5E-6 A/mm. Supported by the high-quality carbon-doped GaN buffer on sapphire, the VBK can reach more than 10 kV with the anode-to-cathode spacing of 85 {\mu}m. Combining the VBK and the specific on-resistance (Ron,sp) of 25.1 m{\Omega}.cm^2, the power figure of merit of the SBD can reach 4.0 GW/cm^2, demonstrating a great potential for the application in ultra-high-voltage electronics.
@article{arxiv.2206.07881,
title = {A Lateral AlGaN/GaN Schottky Barrier Diode with 0.36 V Turn-on Voltage and 10 kV Breakdown Voltage by Using Double Barrier Anode Structure},
author = {Ru Xu and Peng Chen and Jing Zhou and Yimeng Li and Yuyin Li and Tinggang Zhu and Dunjun Chen and Zili Xie and Jiandong Ye and Xiangqian Xiu and Rong Zhang and Youdou Zheng},
journal= {arXiv preprint arXiv:2206.07881},
year = {2022}
}
Comments
4 pages, 4 figures and 1 table. This work has ever been successfully submitted to the IEEE Electron Device Letters for possible publication in Jan. 2022, and the manuscript ID is EDL-2022-01-0014. Finally, it is suggested to be submitted to another journal such as IEEE TED