Applied Physics · Physics
Comparison of reverse current mechanisms in GaN Schottky diodes grown on sapphire versus ammonothermal GaN substrates
B. Orfao, M. Abou Daher, H. Bouillaud, Y. Roelens +4
2026-01-12
Materials Science · Physics
A Lateral AlGaN/GaN Schottky Barrier Diode with 0.36 V Turn-on Voltage and 10 kV Breakdown Voltage by Using Double Barrier Anode Structure
Ru Xu, Peng Chen, Jing Zhou, Yimeng Li +8
2022-06-17
Applied Physics · Physics
Temperature Dependent Characteristics of Quasi-vertical AlN Schottky Diodes on Bulk AlN Substrate
Md Abdul Hamid, Nabasindhu Das, Advait Gilankar, Brad Lenzen +2
2026-04-08
Mesoscale and Nanoscale Physics · Physics
A physical model for the reverse leakage current in (In,Ga)N/GaN light-emitting diodes based on nanowires
M. Musolino, D. van Treeck, A. Tahraoui, L. Scarparo +5
2016-02-17
Materials Science · Physics
Fabrication of a 600V/20A 4H-SiC Schottky Barrier Diode
In-Ho Kang, Sang-Cheol Kim, Jung-Hyeon Moon, Wook Bahng +1
2015-06-18
Materials Science · Physics
Degradation of 2.4-kV $Ga_{2}O_{3}$ Schottky Barrier Diode at High Temperatures up to 500 {\deg}C
Hunter Ellis, Wei Jia, Imteaz Rahaman, Apostoli Hillas +4
2025-03-20
Materials Science · Physics
Effect of crystalline anisotropy on vertical (-201) and (010) beta-Ga2O3 Schottky barrier diodes on EFG single-crystal substrates
Houqiang Fu, Hong Chen, Xuanqi Huang, Izak Baranowski +3
2018-06-06
Materials Science · Physics
Ni Schottky barrier on heavily doped phosphorous implanted 4H-SiC
Marilena Vivona, Giuseppe Greco, Monia Spera, Patrick Fiorenza +3
2021-08-25
Materials Science · Physics
Negative capacitance overcomes Schottky-gate limits in GaN high-electron-mobility transistors
Asir Intisar Khan, Jeong-Kyu Kim, Urmita Sikder, Koushik Das +4
2025-07-14
Mesoscale and Nanoscale Physics · Physics
Multifunctional Devices and Logic Gates With Undoped Silicon Nanowires
Massimo Mongillo, Panayotis Spathis, Georgios Katsaros, Pascal Gentile +1
2012-08-08
Applied Physics · Physics
2.5-kV AlGaN/GaN Schottky Barrier Diode on Silicon Substrate with Recessed-anode Structure
Ru Xu, Peng Chen, Menghan Liu, Jing Zhou +8
2021-02-24
Materials Science · Physics
Low temperature tunneling current enhancement in silicide/Si Schottky contacts with nanoscale barrier width
Nicolas Reckinger, Xiaohui Tang, Emmanuel Dubois, Guilhem Larrieu +3
2011-10-26
Materials Science · Physics
Carrier transport in reverse-biased graphene/semiconductor Schottky junctions
D. Tomer, S. Rajput, L. J. Hudy, C. H. Li +1
2015-05-20
Applied Physics · Physics
Radiation Resilience of $\beta$-Ga$_2$O$_3$ Schottky Barrier Diodes Under High Dose Gamma Radiation
Saleh Ahmed Khan, Sudipto Saha, Uttam Singisetti, A F M Anhar Uddin Bhuiyan
2025-10-21
Materials Science · Physics
Modiffied Schottky emission to explain thickness dependence and slow depolarization in BaTiO$_3$ nanowires
Y. Qi, J. M. P. Martirez, Wissam A. Saidi, J. J. Urban +3
2015-02-16
Applied Physics · Physics
Over 600 V Lateral AlN-on-AlN Schottky Barrier Diodes with Ultra-Low Ideality Factor
Dinusha Herath Mudiyanselage, Dawei Wang, Ziyi He, Bingcheng Da +1
2024-06-25
Materials Science · Physics
Unusually strong space-charge-limited current in thin wires
A. Alec Talin, François Léonard, B. S. Swartzentruber, Xin Wang +1
2009-11-13
Mesoscale and Nanoscale Physics · Physics
Temperature dependent transport characteristics of graphene/n-Si diodes
S. Parui, R. Ruiter, P. J. Zomer, M. Wojtaszek +2
2017-02-08
Materials Science · Physics
Current transport in Ni Schottky barrier on GaN epilayer grown on free standing substrates
Giuseppe Greco, Patrick Fiorenza, Emanuela Schilirò, Corrado Bongiorno +8
2023-04-25
Mesoscale and Nanoscale Physics · Physics
Leaky mode analysis of luminescent thin films: the case of ZnO on sapphire
Roy Aad, Laurent Divay, Aurelien Bruyant, Sylvain Blaize +3
2013-07-04