Reverse-biased graphene (Gr)/semiconductor Schottky diodes exhibit much enhanced sensitivity for gas sensing. However, carrier transport across the junctions is not fully understood yet. Here, Gr/SiC, Gr/GaAs and Gr/Si Schottky junctions under reverse-bias are investigated by temperature-dependent current-voltage measurements. A reduction in barrier height with increasing reverse-bias is observed for all junctions, suggesting electric-field enhanced thermionic emission. Further analysis of the field dependence of the reverse current reveals that while carrier transport in Gr/SiC Schottky junctions follows the Poole-Frenkel mechanism, it deviates from both the Poole-Frankel and Schottky mechanisms in Gr/Si and Gr/GaAs junctions, particularly for low temperatures and fields.
@article{arxiv.1503.08738,
title = {Carrier transport in reverse-biased graphene/semiconductor Schottky junctions},
author = {D. Tomer and S. Rajput and L. J. Hudy and C. H. Li and L. Li},
journal= {arXiv preprint arXiv:1503.08738},
year = {2015}
}