By reversing the Schottky barrier-height asymmetry in hot-electron semiconductor-metal-semiconductor ballistic spin filtering spin detectors, we have achieved: 1. Demonstration of >50% spin polarization in silicon, resulting from elimination of the ferromagnet/silicon interface on the transport channel detector contact, and 2. Evidence of spin transport at temperatures as high as 260K, enabled by an increase of detector Schottky barrier height.
@article{arxiv.1009.4624,
title = {Reverse Schottky-Asymmetry Spin Current Detectors},
author = {Yuan Lu and Ian Appelbaum},
journal= {arXiv preprint arXiv:1009.4624},
year = {2010}
}