In this paper we carry out a theoretical and experimental study of the nature of graphene/semiconductor Schottky contact. We present a simple and parameter-free carrier transport model of graphene/semiconductor Schottky contact derived from quantum statistical theory, which is validated by the quantum Landauer theory and first-principle calculations. The proposed model can well explain experimental results for samples of different types of graphene/semiconductor Schottky contact.
Cite
@article{arxiv.1503.02758,
title = {Revised diode equation for Ideal Graphene-Semiconductor Schottky Junction},
author = {Shi-Jun Liang and Lay Kee Ang},
journal= {arXiv preprint arXiv:1503.02758},
year = {2017}
}