7.86 kV GaN-on-GaN PN Power Diode with BaTiO3 for Electrical Field Management

Yibo Xu; Vijay Gopal Thirupakuzi Vangipuram; Vishank Telasara; Junao Cheng; Yuxuan Zhang; Tadao Hashimoto; Edward Letts; Daryl Key; Hongping Zhao; Wu Lu

7.86 kV GaN-on-GaN PN Power Diode with BaTiO3 for Electrical Field Management

Applied Physics 2023-03-29 v1

Authors: Yibo Xu , Vijay Gopal Thirupakuzi Vangipuram , Vishank Telasara , Junao Cheng , Yuxuan Zhang , Tadao Hashimoto , Edward Letts , Daryl Key , Hongping Zhao , Wu Lu

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Abstract

Device based on GaN have great potential for high power switching applications due to its high breakdown field and high electron mobility. In this work, we present the device design of a vertical GaN-on-GaN PN power diode using high dielectric constant (high-k) dielectrics for electrical field management and high breakdown voltages, in together with guard-rings and a field plate. The fabricated diodes with a 57 um thick drift layer demonstrated a breakdown voltage of 7.86 kV on a bulk GaN substrate. The device has an on-resistance of 2.8 mohm.cm2 and a Baliga figure of merit of 22 GW/cm2.

Keywords

gan power diode high-k dielectric breakdown voltage electric field management baliga figure of merit vertical device

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@article{arxiv.2303.15646,
  title  = {7.86 kV GaN-on-GaN PN Power Diode with BaTiO3 for Electrical Field Management},
  author = {Yibo Xu and Vijay Gopal Thirupakuzi Vangipuram and Vishank Telasara and Junao Cheng and Yuxuan Zhang and Tadao Hashimoto and Edward Letts and Daryl Key and Hongping Zhao and Wu Lu},
  journal= {arXiv preprint arXiv:2303.15646},
  year   = {2023}
}

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4 pages, 6 figures

7.86 kV GaN-on-GaN PN Power Diode with BaTiO3 for Electrical Field Management

Abstract

Keywords

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