The performance of ultra-wide band gap materials like β-Ga2O3 is critically dependent on achieving high average electric fields within the active region of the device. In this report, we show that high-k gate dielectrics like BaTiO3 can provide an efficient field management strategy by improving the uniformity of electric field profile in the gate-drain region of lateral field effect transistors. Using this strategy, we were able to achieve high average breakdown fields of 1.5 MV/cm and 4 MV/cm at gate-drain spacing (Lgd) of 6 um and 0.6 um respectively in β-Ga2O3, at a high channel sheet charge density of 1.8x1013cm−2. The high sheet charge density together with high breakdown field enabled a record power figure of merit (V2br/Ron) of 376 MW/cm2 at a gate-drain spacing of 3 um.
@article{arxiv.2006.02349,
title = {Electrostatic Engineering using Extreme Permittivity Materials for Ultra-wide Bandgap Semiconductor Transistors},
author = {Nidhin Kurian Kalarickal and Zixuan Feng and A F M Anhar Uddin Bhuiyan and Zhanbo Xia and Joe F. McGlone and Wyatt Moore and Aaron R. Arehart and Steven A. Ringel and Hongping Zhao and Siddharth Rajan},
journal= {arXiv preprint arXiv:2006.02349},
year = {2020}
}