We have demonstrated that depletion/enhancement-mode b-Ga2O3 on insulator field-effect transistors can achieve a record high drain current density of 1.5/1.0 A/mm by utilizing a highly doped b-Ga2O3 nano-membrane as the channel. b-Ga2O3 on insulator field-effect transistor (GOOI FET) shows a high on/off ratio of 1010 and low subthreshold slope of 150 mV/dec even with 300 nm thick SiO2. The enhancement-mode GOOI FET is achieved through surface depletion. An ultra-fast, high resolution thermo-reflectance imaging technique is applied to study the self-heating effect by directly measuring the local surface temperature. High drain current, low Rc, and wide bandgap make the b-Ga2O3 on insulator field-effect transistor a promising candidate for future power electronics applications.
@article{arxiv.1703.06197,
title = {\b{eta}-Ga2O3 on Insulator Field-effect Transistors with Drain Currents Exceeding 1.5 A/mm and Their Self-heating Effect},
author = {Hong Zhou and Kerry Maize and Gang Qiu and Ali Shakouri and Peide D. Ye},
journal= {arXiv preprint arXiv:1703.06197},
year = {2017}
}