English

Transistor operation and mobility enhancement in top-gated LaAlO_3 / SrTiO_3 heterostructures

Materials Science 2015-06-16 v1
Authors: M. Hosoda , Y. Hikita , H. Y. Hwang , C. Bell
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Abstract

We report the operation of LaAlO_3 / SrTiO_3 depletion mode top-gated junction field-effect transistors using a range of LaAlO_3 thicknesses as the top gate insulator. Gated Hall bars show near ideal transistor characteristics at room temperature with on-off ratios greater than 1000. Lower temperature measurements demonstrate a systematic increase in the Hall mobility as the sheet carrier density in the channel is depleted via the top gate, providing a route to higher mobility, lower density electron gases in this system.

Keywords

LaAlO_3 / SrTiO_3 heterostructures junction field-effect transistors top-gated Hall mobility sheet carrier density depletion mode

Cite

@article{arxiv.1306.4351,
  title  = {Transistor operation and mobility enhancement in top-gated LaAlO_3 / SrTiO_3 heterostructures},
  author = {M. Hosoda and Y. Hikita and H. Y. Hwang and C. Bell},
  journal= {arXiv preprint arXiv:1306.4351},
  year   = {2015}
}

Comments

10 pages, 4 figures, submitted for publication

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