A series of 100 nm LaVO3 thin films have been synthesized on (001)-oriented SrTiO3 substrates using the pulsed laser deposition technique, and the effects of growth temperature are analyzed. Transport properties reveal a large electronic mobility and a non-linear Hall effect at low temperature. In addition, a cross-over from a semiconducting state at high-temperature to a metallic state at low-temperature is observed, with a clear enhancement of the metallic character as the growth temperature increases. Optical absorption measurements combined with the two-bands analysis of the Hall effect show that the metallicity is induced by the diffusion of oxygen vacancies in the SrTiO3 substrate. These results allow to understand that the film/substrate heterostructure behaves as an original semiconducting-metallic parallel resistor, and electronic transport properties are consistently explained.
@article{arxiv.1403.7648,
title = {Two components for one resistivity in LaVO3/SrTiO3 heterostructures},
author = {Helene Rotella and Olivier Copie and Alain Pautrat and Philippe Boullay and Adrian David and Christophe Labbe and Cedric Frilay and Denis Pelloquin and Wilfrid Prellier},
journal= {arXiv preprint arXiv:1403.7648},
year = {2015}
}
Comments
Improved version as accepted in Journ Phys: Cond Mat. Additional Optical measurements are presented