Dominant mobility modulation by the electric field effect at the LaAlO_3 / SrTiO_3 interface

C. Bell; S. Harashima; Y. Kozuka; M. Kim; B. G. Kim; Y. Hikita; H. Y. Hwang

doi:10.1103/PhysRevLett.103.226802

Dominant mobility modulation by the electric field effect at the LaAlO_3 / SrTiO_3 interface

Superconductivity 2015-05-13 v1 Strongly Correlated Electrons

Authors: C. Bell , S. Harashima , Y. Kozuka , M. Kim , B. G. Kim , Y. Hikita , H. Y. Hwang

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Abstract

Caviglia et al. [Nature (London) 456, 624 (2008)] have found that the superconducting LaAlO_3 / SrTiO_3 interface can be gate modulated. A central issue is to determine the principal effect of the applied electric field. Using magnetotransport studies of a gated structure, we find that the mobility variation is almost five times as large as the sheet carrier density. Furthermore, superconductivity can be suppressed at both positive and negative gate bias. These results indicate that the relative disorder strength strongly increases across the superconductor-insulator transition.

Keywords

oxide heterostructures oxide interfaces magnetoresistance

Cite

@article{arxiv.0906.5310,
  title  = {Dominant mobility modulation by the electric field effect at the LaAlO_3 / SrTiO_3 interface},
  author = {C. Bell and S. Harashima and Y. Kozuka and M. Kim and B. G. Kim and Y. Hikita and H. Y. Hwang},
  journal= {arXiv preprint arXiv:0906.5310},
  year   = {2015}
}

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4 pages, 4 figures

Dominant mobility modulation by the electric field effect at the LaAlO_3 / SrTiO_3 interface

Abstract

Keywords

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