Field Effect Transistor Based on KTaO3 Perovskite

K. Ueno; I. H. Inoue; T. Yamada; H. Akoh; Y. Tokura; H. Takagi

doi:10.1063/1.1703841

Field Effect Transistor Based on KTaO3 Perovskite

Strongly Correlated Electrons 2009-11-10 v1 Materials Science

Authors: K. Ueno , I. H. Inoue , T. Yamada , H. Akoh , Y. Tokura , H. Takagi

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Abstract

An n-channel accumulation-type field effect transistor (FET) has been fabricated utilizing a KTaO3 single crystal as an active element and a sputtered amorphous Al2O3 film as a gate insulator. The device demonstrated an ON/OFF ratio of 10^4 and a field effect mobility of 0.4cm^2/Vs at room temperature, both of which are much better than those of the SrTiO3 FETs reported previously. The field effect mobility was almost temperature independent down to 200K. Our results indicate that the Al2O3 / KTaO3 interface is worthy of further investigations as an alternative system of future oxide electronics.

Keywords

field-effect transistors oxide heterostructures ferroelectric

Cite

@article{arxiv.cond-mat/0312308,
  title  = {Field Effect Transistor Based on KTaO3 Perovskite},
  author = {K. Ueno and I. H. Inoue and T. Yamada and H. Akoh and Y. Tokura and H. Takagi},
  journal= {arXiv preprint arXiv:cond-mat/0312308},
  year   = {2009}
}

Comments

3 pages, 3 Postscript figures, submitted to Appl.Phys.Lett

Field Effect Transistor Based on KTaO3 Perovskite

Abstract

Keywords

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