The possible existence of short-channel effects in oxide field-effect transistors is investigated by exploring field-effect transistors with various gate lengths fabricated from LaAlO3-SrTiO3 heterostructures. The studies reveal the existence of channel-length modulation and drain-induced barrier lowering for gate lengths below 1 {\mu}m, with a characteristic behavior comparable to semiconducting devices. With the fabrication of field-effect transistors with gate lengths as small as 60 nm the results demonstrate the possibility to fabricate by electron-beam lithography functional devices based on complex oxides with characteristic lengths of several ten nanometers.
@article{arxiv.1511.07680,
title = {Field Effect Transistors with Sub-Micrometer Gate Lengths Fabricated from LaAlO$_3$-SrTiO$_3$-Based Heterostructures},
author = {C. Woltmann and T. Harada and H. Boschker and V. Srot and P. A. van Aken and H. Klauk and J. Mannhart},
journal= {arXiv preprint arXiv:1511.07680},
year = {2016}
}