Despite the widespread use of solution-processable hybrid organic-inorganic perovskites in photovoltaic and light-emitting applications, determination of their intrinsic charge transport parameters has been elusive due to the variability of film preparation and history-dependent device performance. Here we show that screening effects associated to ionic transport can be effectively eliminated by lowering the operating temperature of methylammonium lead iodide perovskite (CH3NH3PbI3) field-effect transistors (FETs). Field-effect carrier mobility is found to increase by almost two orders of magnitude below 200 K, consistent with phonon scattering limited transport. Under balanced ambipolar carrier injection, gate-dependent electroluminescence is also observed from the transistor channel, with spectra revealing the tetragonal to orthorhombic phase transition. This first demonstration of CH3NH3PbI3 light-emitting FETs provides intrinsic transport parameters to guide materials and solar cell optimization, and will drive the development of new electro-optic device concepts, such as gated light emitting diodes and lasers operating at room temperature.
@article{arxiv.1501.04407,
title = {Lead Iodide Perovskite Light-Emitting Field-Effect Transistor},
author = {Xin Yu Chin and Daniele Cortecchia and Jun Yin and Annalisa Bruno and Cesare Soci},
journal= {arXiv preprint arXiv:1501.04407},
year = {2019}
}