English

Semiconducting behaviors at epitaxial Ca0.5TaO3 interfaces

Materials Science 2025-02-18 v1

Abstract

Emergent phenomena take place in symmetry-breaking systems, notably the recently discovered two-dimensional electron gas and its tunable superconductivities near the KTaO3 interfaces. Here, we synthesized perovskite Ca0.5TaO3 films along both [001] and [111] orientations. Different from the KTaO3 system, Ca0.5TaO3 films show semiconducting behaviors when capped with LaAlO3 films in both [001] and [111] orientations. By growing films at higher temperatures, more oxygen vacancies can be introduced, and the carrier density can be tuned from ~ 1014 cm-2 to ~ 1016 cm-2. Another difference is that the superconducting transition temperature Tc in KTaO3 (111) increases linearly along with its carrier density, while the Ca0.5TaO3 (111) remains semiconducting when carrier density ranges from ~ 1014 cm-2 to ~ 1016 cm-2. Based on the density function theory calculation, Ca0.5TaO3 and KTaO3 show similar electronic band structures. According to the energy-dispersive X-ray spectroscopy, we found heavy Sr diffusion from the substrate to the Ca0.5TaO3 layer, which may destroy the interfacial conductivity. Our work demonstrates that besides the oxygen vacancies, electronic transport is sensitive to the atomic intermixing near the interface in tantulates.

Keywords

Cite

@article{arxiv.2502.10730,
  title  = {Semiconducting behaviors at epitaxial Ca0.5TaO3 interfaces},
  author = {Guangdong Nie and Guanghui Han and Shengpu Huang and Huiyin Wu and Deshun Wang and Kangxi Liu and Hao Ding and Fangdong Tang and Licong Peng and Dashuai Ma and Young Sun and Changjiang Liu and Deshun Hong},
  journal= {arXiv preprint arXiv:2502.10730},
  year   = {2025}
}