Scaled Atomic-Layer-Deposited Indium Oxide Nanometer Transistors with Maximum Drain Current Exceeding 2 A/mm at Drain Voltage of 0.7 V

Mengwei Si; Zehao Lin; Adam Charnas; Peide D. Ye

doi:10.1109/LED.2020.3043430

Scaled Atomic-Layer-Deposited Indium Oxide Nanometer Transistors with Maximum Drain Current Exceeding 2 A/mm at Drain Voltage of 0.7 V

Materials Science 2021-02-24 v1 Mesoscale and Nanoscale Physics Applied Physics

Authors: Mengwei Si , Zehao Lin , Adam Charnas , Peide D. Ye

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Abstract

In this work, we demonstrate scaled back-end-of-line (BEOL) compatible indium oxide (In2O3) transistors by atomic layer deposition (ALD) with channel thickness (Tch) of 1.0-1.5 nm, channel length (Lch) down to 40 nm, and equivalent oxide thickness (EOT) of 2.1 nm, with record high drain current of 2.0 A/mm at VDS of 0.7 V among all oxide semiconductors. Enhancement-mode In2O3 transistors with ID over 1.0 A/mm at VDS of 1 V are also achieved by controlling the channel thickness down to 1.0 nm at atomic layer scale. Such high current density in a relatively low mobility amorphous oxide semiconductor is understood by the formation of high density 2D channel beyond 4E13 /cm2 at HfO2/In2O3 oxide/oxide interface.

Keywords

indium oxide transistor atomic layer deposition back-end-of-line drain current 2d channel oxide semiconductor

Cite

@article{arxiv.2012.04789,
  title  = {Scaled Atomic-Layer-Deposited Indium Oxide Nanometer Transistors with Maximum Drain Current Exceeding 2 A/mm at Drain Voltage of 0.7 V},
  author = {Mengwei Si and Zehao Lin and Adam Charnas and Peide D. Ye},
  journal= {arXiv preprint arXiv:2012.04789},
  year   = {2021}
}

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14 pages, 6 figures, to be published in IEEE Electron Device Letters

Scaled Atomic-Layer-Deposited Indium Oxide Nanometer Transistors with Maximum Drain Current Exceeding 2 A/mm at Drain Voltage of 0.7 V

Abstract

Keywords

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