We report on the design and demonstration of polarization-engineered GaN/InGaN/GaN tunnel junction diodes with high current density and low tunneling turn-on voltage. Wentzel-Kramers-Brillouin (WKB) calculations were used to model and design tunnel junctions with narrow bandgap InGaN-based barrier layers. N-polar p-GaN/In0.33Ga0.67N/n-GaN heterostructure tunnel diodes were grown using molecular beam epitaxy. Efficient zero bias tunneling turn-on with a high current density of 118 A/cm2 at a reverse bias of 1V, reaching a maximum current density up to 9.2 kA/cm2 were obtained. These results represent the highest current density reported in III-nitride tunnel junctions, and demonstrate the potential of III-nitride tunnel devices for a broad range of optoelectronic and electronic applications.
@article{arxiv.1008.4124,
title = {Polarization-engineered GaN/InGaN/GaN tunnel diodes},
author = {Sriram Krishnamoorthy and Digbijoy N. Nath and Fatih Akyol and Pil Sung Park and Michele Esposto and Siddharth Rajan},
journal= {arXiv preprint arXiv:1008.4124},
year = {2011}
}