Selective-injection GaN Heterojunction Bipolar Transistors with 275 kA/cm$^2$ Current Density

We design and demonstrate selective injection GaN heterojunction bipolar transistors that utilize a patterned base for selective injection of electrons from the emitter. The design maneuvers minority carrier injection through a thin p-GaN base region, while the majority carrier holes for base current are injected from thick p-GaN regions adjacent to the thin p-GaN base. The design is realized using a regrowth emitter approach with SiO$_2$ as a spacer between the emitter layer and the thick p-GaN base contact regions. The fabricated device demonstrated state-of-art output current density (I$_{C, max}$) ~275 kA/cm$^2$ with a current gain ($\beta$) of 9, and 17 for the planar HBT design (I$_{C, max}$ =150 kA/cm$^2$). The reported results highlight the potential of the selective injection design to overcome the persistent GaN HBT design tradeoff between base resistance and current gain, paving the way for next-generation radio frequency and mm-Wave applications.