High-performance p-channel transistors are crucial to implementing efficient complementary circuits in wide-bandgap electronics, but progress on such devices has lagged far behind their powerful electron-based counterparts due to the inherent challenges of manipulating holes in wide-gap semiconductors. Building on recent advances in materials growth, this work sets simultaneous records in both on-current (10 mA/mm) and on-off modulation (four orders) for the GaN/AlN wide-bandgap p-FET structure. A compact analytical pFET model is derived, and the results are benchmarked against the various alternatives in the literature, clarifying the heterostructure trade-offs to enable integrated wide-bandgap CMOS for next-generation compact high-power devices.
@article{arxiv.1809.04012,
title = {Gate-recessed E-mode p-channel HFET with high on-current based on GaN/AlN 2D hole gas},
author = {Samuel James Bader and Reet Chaudhuri and Kazuki Nomoto and Austin Hickman and Zhen Chen and Han Wui Then and David A. Muller and Huili Grace Xing and Debdeep Jena},
journal= {arXiv preprint arXiv:1809.04012},
year = {2018}
}