Demonstration of Forward Inter-band Tunneling in GaN by Polarization Engineering

Sriram Krishnamoorthy; Pil Sung Park; Siddharth Rajan

doi:10.1063/1.3666862

Demonstration of Forward Inter-band Tunneling in GaN by Polarization Engineering

Materials Science 2011-12-30 v1 Mesoscale and Nanoscale Physics

Authors: Sriram Krishnamoorthy , Pil Sung Park , Siddharth Rajan

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Abstract

We report on the design, fabrication, and characterization of GaN interband tunnel junction showing forward tunneling characteristics. We have achieved very high forward tunneling currents (153 mA/cm2 at 10 mV, and 17.7 A/cm2 peak current) in polarization-engineered GaN/InGaN/GaN heterojunction diodes grown by plasma assisted molecular beam epitaxy. We also report the observation of repeatable negative differential resistance in interband III-Nitride tunnel junctions, with peak-valley current ratio (PVCR) of 4 at room temperature. The forward current density achieved in this work meets the typical current drive requirements of a multi-junction solar cell.

Keywords

GaN interband tunneling polarization engineering tunnel junction negative differential resistance molecular beam epitaxy multi-junction solar cell

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@article{arxiv.1108.4075,
  title  = {Demonstration of Forward Inter-band Tunneling in GaN by Polarization Engineering},
  author = {Sriram Krishnamoorthy and Pil Sung Park and Siddharth Rajan},
  journal= {arXiv preprint arXiv:1108.4075},
  year   = {2011}
}

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Demonstration of Forward Inter-band Tunneling in GaN by Polarization Engineering

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