The photovoltaic properties of (0001) n-InGaN/p-GaN single heterojunctions were investigated numerically and compared with those of conventional p-GaN/i-InGaN/n-GaN structures, employing realistic material parameters. This alternative device architecture exploits the large polarization fields, and high efficiency modules are achieved for In-rich, partially relaxed and coherently strained InGaN films. Conversion efficiencies up to 14% under AM1.5G illumination can be reached, revealing the true potential of InGaN single junction solar cells with proper design.
@article{arxiv.1709.03729,
title = {Polarization-Engineered InGaN/GaN Heterojunctions for Photovoltaic Applications},
author = {Stylianos A. Kazazis and Elena Papadomanolaki and Eleftherios Iliopoulos},
journal= {arXiv preprint arXiv:1709.03729},
year = {2017}
}
Comments
A modified version of this work has been submitted to IEEE Journal of Photovoltaics