Related papers: Schottky diode temperature sensor for pressure sen…
In this paper, we study the Schottky transport in narrow-gap semiconductor and few-layer graphene in which the energy dispersions are highly non-parabolic. We propose that the contrasting current-temperature scaling relation of $J\propto…
As a flammable and explosive industrial gas, C2H2 gas detection is necessary and significant. Herein, highly sensitive C2H2 gas sensor was initially fabricated by carbon-decorated SnO2 nanoparticles, which was prepared using CVD method with…
Reverse-biased graphene (Gr)/semiconductor Schottky diodes exhibit much enhanced sensitivity for gas sensing. However, carrier transport across the junctions is not fully understood yet. Here, Gr/SiC, Gr/GaAs and Gr/Si Schottky junctions…
The value of the scaling parameter $E_{\text{eff}}$ of the temperature dependence for current generated in silicon bulk is investigated for highly irradiated devices. Measurements of devices irradiated to fluences above $1 \times 10^{15}…
We present the characterization of commercial tunnel diode low-level microwave power detectors at room and cryogenic temperatures. The sensitivity as well as the output voltage noise of the tunnel diodes are measured as functions of the…
We report on measurements performed on silicon pixel sensor prototypes exposed to a 200 MeV proton beam at the Indiana University Cyclotron Facility. The sensors are of n+/n/p+ type with multi-guard ring structures on the p+-side and p-stop…
A novel photonic thermal diode concept operating in the near field and capitalizing on the temperature-dependence of coupled surface polariton modes in nanostructures is proposed. The diode concept utilizes terminals made of the same…
Ultrathin microscale resistive thermometers are of key value to many applications. Here we have fabricated a laser machined 50 ${\mu}$m wide and 50 nm thick serpentine Pt thin film sensor capable of sensing temperatures up to 650 ${^\circ}$…
The experiment of the future electron-positron colliders has unprecedented requirements on the vertex resolution, such as around 3micron single point resolution for the inner most detector layer, with fast readout, and very low…
CdTe is increasingly being used as the x-ray sensing material in imaging pixel array detectors for x-rays, generally above 20 keV, where silicon sensors become unacceptably transparent. Unfortunately CdTe suffers from polarization, which…
Compared with silicon (Si) power devices, Silicon carbide (SiC) devices have the advantages of fast switching speed and low on-resistance. However, the effects of non-ideal characteristics of SiC MOSFETs and stray parameters (especially…
In this research, we developed a low-power silicon photonics foundry-fabricated slow-light thermal phase shifter (SLTPS) where the slow-light (SL) effect is achieved using an integrated Bragg grating (BG) waveguide. Heating the grating…
Silicon pad sensors with novel functions of higher timing resolution (LGAD: Low Gain Avalanche Detector) and higher position resolution (PSD: Position Sensitive Detector) are studied for an application to Silicon-Tungsten electromagnetic…
The increasing need for efficient thermal management in nanoelectronics requires innovative thermal sensing solutions, as conventional sensors often exhibit nonlinear responses, low sensitivity, and complex calibration. We predict a…
Studies of photoluminescence (PL) can provide fundamental insight into the optical properties of semiconductor nanoparticles (NPs) but the same is being limited by NP size distribution and low luminescence yield. Inorganic semiconductor…
In a multiprocessor system on chip (MPSoC) IC the processor is one of the highest heat dissipating devices. The temperature generated in an IC may vary with floor plan of the chip. This paper proposes an integration and thermal analysis…
We demonstrate electrical injection and detection of spin-polarized electrons in silicon (Si) using epitaxially grown Fe_3Si/Si Schottky-tunnel-barrier contacts. By an insertion of a delta-doped n^+-Si layer (~ 10^19 cm^-3) near the…
In this work, we describe the charge transport in two-dimensional (2D) Schottky barrier field-effect transistors (SB-FETs) based on the carrier injection at the Schottky contacts. We first develop a numerical model for thermionic and…
The fabrication, initial structural characterization and diode measurements are reported for the first boron carbide / silicon carbide heterojunction diode. Current-voltage curves obtained for operation at temperatures from 24 C to 388 C.…
GaN-based lateral Schottky diodes (SBDs) have attracted great attention for high-power applications due to its combined high electron mobility and large critical breakdown field. However, the breakdown voltage (BV) of the SBDs are far from…