Related papers: Schottky diode temperature sensor for pressure sen…
Similar to the diode in electronics, a thermal diode is a two-terminal device that allows heat to transfer easier in one direction (forward bias) than in the opposite direction (reverse bias). Unlike conductive and convective thermal…
We present study of derivatives of current-voltage I(V) characteristics of point-contacts (PCs) based on Ba{1-x}Na{x}Fe2As2 (x=0.25) in the normal and superconducting state. The detailed analysis of dV/dI(V) data (also given in Appendix A)…
The continued advancements of Silicon Photomultipliers (SiPMs) have made them viable photosensors for low recoil energy Pulse Shape Discrimination (PSD) between fast neutron and gamma interactions when coupled to an appropriate…
Graphene-silicon (GS) Schottky junctions have been demonstrated as an efficient architecture for photodetection. However, the response speed of such devices for free space light detection has so far been limited to 10's-100's of kHz for…
We present the design, construction, and performance of a facility for the characterization of Silicon Avalanche Photodiodes in the operating temperature range between -2 $^\circ$C and 25 $^\circ$C. The system can simultaneously measure up…
This article introduces a thin-film thermocouple temperature sensor with symmetrical electrode structure. It uses PI film as a flexible substrate. Cu film and CuNi film made by MEMS manufacturing process as positive and negative electrodes.…
We report over 3 kV breakdown voltage and ultra-low leakage (011) \b{eta}-Ga2O3 power devices utilizing Schottky barrier engineering and high-permittivity (\k{appa}) dielectric (ZrO2) field plate. The (011) orientation of \b{eta}-Ga2O3…
We have built a variable temperature scanning probe microscope (SPM) that covers 4.6 K - 180 K and up to 7 Tesla whose SPM head fits in a 52 mm bore magnet. It features a temperature-controlled sample stage thermally well isolated from the…
Phase-sensitive detection (PSD) is an important experimental technique that allows signals to be extracted from noisy data. PSD is also used in modulation spectroscopy and is used in the stabilization of optical sources. Commercial lock-in…
Resistance thermometry is a time-tested method for taking temperature measurements. In recent years fundamental limits to resistance-based approaches spurred considerable interest in developing photonic temperature sensors as a viable…
A generally applicable model is presented to describe the potential barrier shape in ultra small Schottky diodes. It is shown that for diodes smaller than a characteristic length $l_c$ (associated with the semiconductor doping level) the…
Graphene-Silicon Schottky diode photodetectors possess beneficial properties such as high responsivities and detectivities, broad spectral wavelength operation and high operating speeds. Various routes and architectures have been employed…
In this paper, the Ni Schottky barrier on GaN epilayer grown on free standing substrates has been characterized. First, transmission electrical microscopy (TEM) images and nanoscale electrical analysis by conductive atomic force microscopy…
A scheme is proposed to electrically measure the spin-momentum coupling in the topological insulator surface state by injection of spin polarized electrons from silicon. As a first approach, devices were fabricated consisting of thin…
Nanoelectrical and photonic integration of quantum optical components is crucial for scalable solid-state quantum technologies. Silicon carbide stands out as a material with mature quantum defects and a wide variety of applications in…
Novel group IVV 2D semiconductors (e.g., GeAs and SiAs) has arisen as an attractive candidate for broad-band photodetection and optoelectronic applications. This 2D family has wide tunable bandgap, excellent thermodynamic stability, and…
Fabrication and characterization of instrument for high-temperature simultaneous measurement of Seebeck coefficient (S) and thermal conductivity ($\kappa$) has been carried out with python automation. The steady-state based Fourier's law of…
The observation of magnetic diode behavior with ultra-low forward voltage of 5 mV renders new venue for energetically efficient spintronic device research in the unconventional system of two-dimensional permalloy honeycomb lattice. Detailed…
Extensive electrical characterization of ring oscillators (ROs) made in high-$\kappa$ metal gate 28nm Fully-Depleted Silicon-on- Insulator (FD-SOI) technology is presented for a set of temperatures between 296 and 4.3K. First, delay per…
A number of current approaches to quantum and neuromorphic computing use superconductors as the basis of their platform or as a measurement component, and will need to operate at cryogenic temperatures. Semiconductor systems are typically…