Related papers: Schottky diode temperature sensor for pressure sen…

Thermal rectification ratios of solid-liquid phase change thermal diodes (SL-PCTDs) are not sustainable beyond a certain temperature bias, necessitating reasonably compatible designs. Manipulating the heat transfer in the forward and…

We describe optical characterisation of a Strained Silicon Cold Electron Bolometer (CEB), operating on a $350~\mathrm{mK}$ stage, designed for absorption of millimetre-wave radiation. The silicon Cold Electron Bolometer utilises Schottky…

We measured the low temperature subgap resistance of titanium nitride (superconductor, Tc=4.6K)/highly doped silicon (degenerated semiconductor) SIN junctions, where I stands for the Schottky barrier. At low energies, the subgap conductance…

We present a Raman-based Distributed Temperature Sensor (RDTS) with centimetre-scale resolution for thermographic analysis of electronic circuits. Temperature is measured along a single-mode fiber routed across a custom printed circuit…

We present a spectroscopic system constituted by a Silicon Drift Detector (SDD) coupled to a CMOS charge sensitive preamplifier, named SIRIO, specifically designed to reach ultimate low noise levels. The SDD, with an active area of 13 mm ,…

Narrow-channel accumulated body nMOSFET devices with p-type side-gates surrounding the active area have been electrically characterized between 100 and 400 K with varied side-gate biasing (Vside). The subthreshold slope (SS) and drain…

To investigate the role of the interface state on the physical properties of Schottky contacts, Co/n-Ge Schottky diodes that have undergone various cleaning methods (HF etching and in-situ thermal cleaning) were studied by Transmission…

In view of a study on spin-polarized photodiodes, the helicity-dependent photocurrent in a Fe/x-AlOx/p-GaAs Schottky diode is measured at room temperature by illuminating a circularly polarized light beam (785 nm) either horizontally on the…

Cobalt silicide (CoSi2) islands have been formed by the deposition of thin films (~0.1 to 0.3 nm) of cobalt on clean Si(111) and Si(100) substrates in ultrahigh vacuum (UHV) followed by annealing to ~880 degrees C. Conducting atomic force…

We show that in a simple experiment at undergraduate level, suitable to be performed in classes of science and engineering students, it is possible to test accurately, on a popular 1N4148 p-n diode, the range of the junction currents where…

This paper presents a fully-integrated CMOS temperature sensor for densely-distributed thermal monitoring in systems on chip supporting dynamic voltage and frequency scaling. The sensor front-end exploits a sub-threshold PMOS-based circuit…

Silicon carbide (SiC) Schottky diodes 21 mum thick with small surfaces and high N-dopant concentration have been used to detect alpha particles and low energy light ions. In particular 12C and 16O beams at incident energies between 5 and 18…

Phase-sensitive optical coherence tomography (PhS-OCT) enables precise, contactless measurements of temperature-dependent changes in transparent solids. In this work, we used a common-path spectral-domain OCT system to measure optical path…

Resistance thermometry provides a time-tested method for taking temperature measurements. However, fundamental limits to resistance-based approaches has produced considerable interest in developing photonic temperature sensors to leverage…

We show the operation of a Cu/Al_2O_3/Cu/n-Si hot-electron transistor for the straightforward determination of a metal/semiconductor energy barrier height even at temperatures below carrier-freeze out in the semiconductor. The hot-electron…

Efficient and compact frequency converters are essential for frequency stabilization of terahertz sources. In this paper, we present a 3.5-THz, x6-harmonic, integrated Schottky diode mixer operating at room temperature. The designed…

Surface temperature measurements were performed with a Scanning Thermal Microscope mounted with a thermoresistive wire probe of micrometrSurface temperature measurements were performed with a Scanning Thermal Microscope mounted with a…

The Fine Pixel CCD (FPCCD) is one of the candidate sensor technologies for the ILC vertex detector. It will be located near interaction point and require high radiation tolerance. It will thus be operated at -40 degree C to improve…

The Schottky barrier of a metal-semiconductor junction is one of the key quantities affecting the charge transport in a transistor. The Schottky barrier height depends on several factors, such as work function difference, local atomic…

This work demonstrates quasi-vertical beta-Ga2O3 Schottky barrier diodes (SBDs) fabricated on c-plane sapphire using an all-LPCVD, plasma-free process integrating epitaxial growth of high-quality beta-Ga2O3 and in-situ Ga-assisted etching.…