Related papers: Schottky diode temperature sensor for pressure sen…
On-chip temperature sensing on a micro- to nanometer scale is becoming more desirable as the complexity of nanodevices and size requirements increase and with it the challenges in thermal probing and management. This highlights the need for…
For the characterization of components, systems and signals in the RF and microwave range, several dedicated instruments are in use. In this paper the fundamentals of the RF-signal sampling technique, which has found widespread applications…
In this paper, we report a new 4H-SiC Lateral Dual Sidewall Schottky (LDSS) rectifier on a highly doped drift layer consisting of a high-barrier sidewall Schottky contact on top of the low-barrier Schottky contact. Using two-dimensional…
The Forward Silicon Tracker (FST) is a pivotal component of the forward upgrade of the Solenoidal Tracker at RHIC (STAR), designed to discern hadron charge signs with a momentum resolution better than 30% for $0.2 < p_T < 2$ GeV/c in the…
This work presents a self-heating study of a 40-nm bulk-CMOS technology in the ambient temperature range from 300 K down to 4.2 K. A custom test chip was designed and fabricated for measuring both the temperature rise in the MOSFET channel…
Heat capacity measurements under high pressure places high demands on the calorimeter. Here we describe the development of a miniaturized nanocalorimeter for high-pressure heat capacity measurements at low temperature. The device,…
We report on a non-interacting technique for thermal characterization of fluids based on surface plasmon resonance interrogation. Using liquid volumes less than 20 micro liters we have determined the materials' thermo-optic coefficients…
We have demonstrated that GaN Schottky diodes can be used for high energy (64.8 MeV) proton detection. Such proton beams are used for tumor treatment, for which accurate and radiation resistant detectors are needed. Schottky diodes have…
Black phosphorous (BP) is is recently unveiled as a promising two-dimensional direct bandgap semiconducting material. Here, we report the ambipolar field effect transistor behavior of multilayers of BP with ferromagnetic tunnel contacts. We…
Non-reciprocal charge transport in supercurrent diodes (SDs) polarized growing interest in the last few years for its potential applications in superconducting electronics (SCE). So far, SD effects have been reported in complex hybrid…
Silicon photomultipliers are very versatile photo detectors due to their high photon detection efficiency, fast response, single photon counting capability, high amplification, and their insensitivity to magnetic fields. At our institute we…
The Ohmic spin diode (OSD) is a recent concept in spintronics, which is based on half-metallic magnets (HMMs) and spin-gapless semiconductors (SGSs). Quaternary Heusler compounds offer a unique platform to realize the OSD for room…
We present ultra-thin silicon membrane thermocouple bolometers suitable for fast and sensitive detection of low levels of thermal power and infrared radiation at room temperature. The devices are based on 40 nm-thick strain tuned single…
Tunneling spectroscopy measurements have been carried out on a single molecule device formed by two Pd nanocrystals (dia, $\sim$5 nm) electronically coupled by a conducting molecule, dimercaptodiphenylacetylene. The I-V data, obtained by…
A monolithic silicon pixel prototype produced for the MONOLITH ERC Advanced project was irradiated with 70 MeV protons up to a fluence of 1 x 10^16 1 MeV n_eq/cm^2. The ASIC contains a matrix of hexagonal pixels with 100 {\mu}m pitch,…
A simple and low cost apparatus has been designed and built to measure the electrical resistivity, ($\rho$), of metal and semiconductors in 300-620 K temperature range. The present design is suitable to do measurement on rectangular bar…
We report on high-temperature sensing measurements using a tubular-lattice hollow-core photonic crystal fiber displaying a microstructure formed of eight 2.4 um-thick cladding tubes. The larger thickness of our fiber's cladding tubes…
The axion search experiments in the microwave frequency range require high sensitive detectors with intrinsic noise close to quantum noise limit. Josephson parametric amplifiers (JPAs) are the most valuable candidates for the role of the…
The storage ring equipped with an electron cooler is an ideal platform for dielectronic recombination (DR) experiments. In order to fulfil the requirement of DR measurements at the main Cooler Storage Ring, a detuning system for the…
Metal-semiconductor interfaces, known as Schottky junctions, have long been hindered by defects and impurities. Such imperfections dominate the electrical characteristics of the junction by pinning the metal Fermi energy. We report…