The Ohmic spin diode (OSD) is a recent concept in spintronics, which is based on half-metallic magnets (HMMs) and spin-gapless semiconductors (SGSs). Quaternary Heusler compounds offer a unique platform to realize the OSD for room temperature applications as these materials possess very high Curie temperatures as well as half-metallic and spin-gapless semiconducting behavior within the same family. Using state-of-the-art first-principles calculations combined with the non-equilibrium Green's function method we design four different OSDs based on half-metallic and spin-gapless semiconducting quaternary Heusler compounds. All four OSDs exhibit linear current-voltage (I−V) characteristics with zero threshold voltage VT. We show that these OSDs possess a small leakage current, which stems from the overlap of the conduction and valence band edges of opposite spin channels around the Fermi level in the SGS electrodes. The obtained on/off current ratios vary between 30 and 105. Our results can pave the way for the experimental fabrication of the OSDs within the family of ordered quaternary Heusler compounds.
@article{arxiv.2102.01919,
title = {First principles design of Ohmic spin diodes based on quaternary Heusler compounds},
author = {T. Aull and E. Şaşıoğlu and I. Mertig},
journal= {arXiv preprint arXiv:2102.01919},
year = {2021}
}