Novel group IVV 2D semiconductors (e.g., GeAs and SiAs) has arisen as an attractive candidate for broad-band photodetection and optoelectronic applications. This 2D family has wide tunable bandgap, excellent thermodynamic stability, and strong in-plane anisotropy. However, their photonic and optoelectronic properties have not been extensively explored so far. In this work we demonstrate a broadband back-to-back metal-semiconductor-metal (MSM) Schottky photodiode with asymmetric contact geometries based on multilayered 2D GeAs. The photodetector exhibited a Schottky barrier height (SBH) in the range of 0.40 to 0.49 eV. Additionally, it showed low dark current of 1.8 nA with stable, reproducible, and excellent broadband spectral response from UV to optical communication wavelengths. The highest measured responsivity in the visible is 905 A/W at 660 nm wavelength and 98 A/W for 1064 nm near infrared. Most notably, the planner configuration of this GeAs photodetector showed low detector capacitance below 1.2 pf, low voltage operation (<1V), and a large bandwidth which may exceed 40 GHz. The stability and broadband response of the device are promising for this 2D materials application in high-speed optoelectronic devices.
Cite
@article{arxiv.2010.03809,
title = {Planar Multilayered 2D GeAs Schottky Photodiode for High Performance VIS-NIR Photodetection},
author = {Ghada Dushaq and Mahmoud Rasras},
journal= {arXiv preprint arXiv:2010.03809},
year = {2020}
}