This paper presents the design, the fabrication and the characterization of Schottky graphene/silicon photodetectors, operating at both 2 micron and room temperature. The graphene/silicon junction has been carefully: characterized device shows a non ideal behaviour with the increasing temperature and the interfacial trap density has been measured as 1.1x10^14 eV^-1cm^-2. Photodetectors are characterized by an internal (external) responsivity of 10.3 mA/W (0.16 mA/W) in an excellent agreement with the theory. Our devices pave the way for developing hybrid graphene-Si free-space illuminated PDs operating at 2 micron, for free-space optical communications, optical coherence tomography and light-radars.
@article{arxiv.1712.02836,
title = {Free-space graphene/silicon photodetectors operating at 2 micron},
author = {M. Casalino and R. Russo and C. Russo and A. Ciajolo and E. Di Gennaro and M. Iodice and G. Coppola},
journal= {arXiv preprint arXiv:1712.02836},
year = {2021}
}